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futas FUTAS is the future generation Ashing system with H2 gas based plasma source that utilizes high concentration (up to 100%) H2 process gas for optimized polymer removal capability.

The new process is critical for semiconductor manufacturing under the 3Xnm design rule where particle generation, oxidation, and substrate loss are minimized. A Multi-Source Platform is designed for installing Hollow Cathode Plasma (HCP) source with H2-based process gas or Point Inductively Coupled Plasma (PICP) source with O2N2-based process gas to achieve the high density plasma for HDI process applications. Highest ashing rates can also be achieved through utilizing proprietary process

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